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Silicon Wafer
2" 4" 6" 8" 12"
Wafer of Prime, Test, Spacer Wafer
Sapphre Wafer
Glass, Quartz Wafer
8inch [200mm]
Pattern Wafer 8inch
Pattern Wafer 8inch
Bare Wafer 8inch
Epi Wafer 8inch
Oxide Wafer 8inch
Bump Wafer 8inch
12inch [300mm]
Pattern Wafer 12inch
Pattern Wafer 12inch
Bare Wafer 12inch
Oxide Wafer 12inch
Glass Wafer 12inch
| SILICON Bare Wafer (notch / Flat) | ||||||
| Diameter | 3" | 4" | 5" | 6" | 8" | 12" |
| Thickness | Standard Special / Customer's Demand Thickness | |||||
| Size | 75 ± 0.2mm |
100 ± 0.2mm |
125 ± 0.2mm |
150 ± 0.2mm |
200 ± 0.2mm |
300 ± 0.2mm |
| Resistivity | 0.001 〜 100,000 Ohm Cm | |||||
| Growth Method |
CZ, FZ | |||||
| Grade | TEST WAFER / DUMMY WAFER | |||||
| Type | P/N | |||||
| Dopant | P / Boron , N / Phosphorous / Antimony / Arsenic | |||||
| Orientation | 100/110/111 | |||||
| Surface | One Side Polished, Double Side Polished, | |||||
| Back side | Etched / Bare | |||||
| Edge Profile | Rounded Or As Required | |||||
| SILICON Bare Wafer (notch / Flat) | ||||||
| Service | TYPE | Thickness | Delivery | |||
| Thermal Oxidation (4” 〜12”) |
Dry/Wet | 300 〜 20,000 | 10 Days | |||
| Nitride | Normal Low stress | 1,500 〜 3,000 | 10 Days | |||
| Sputtering (4”~12”) |
Al/Si, Cu/Ti, W/Ti | Customized | 10 Days | |||
| Back-End (Si) | Polishing | Bare / Oxidation | 10 Days | |||
| Grinding Lapping |
200um less than | 10 Days | ||||
| 400um less than | 10 Days | |||||
| 400um over | 10 Days | |||||
| Grinding Lapping polishing |
200um less than | 10 Days | ||||
| 400um less than | 10 Days | |||||
| 400um over | 10 Days | |||||
| Dicing | Pattern | Customized | 10 Days | |||
| Cleaning | Chemical | BOE/SC1 | 10 Days | |||